Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas

• Published in: Physica status solidi. C Vol. 5; no. 9; pp. 2733 - 2735
• Main Authors: Hoshii, Takuya, Deura, Momoko, Sugiyama, Masakazu, Nakane, Ryosho, Sugahara, Satoshi, Takenaka, Mitsuru, Nakano, Yoshiaki, Takagi, Shinichi
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.07.2008; WILEY‐VCH Verlag
• Subjects: 68.37.Hk; 68.55.ag; 81.05.Ea; 81.15.Kk
• ISSN: 1862-6351; 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200779309

In this paper, we demonstrate that micro selective area growth (μSAG) is effective in improving the crystal quality of InGaAs on (111) Si through the decrease in the number of the nuclei on a selective growth Si area. It is found that smaller selective areas are better in the morphology of the epitaxial films, while the pitch of selective areas yields a trade‐off relationship between the selectivity and the lateral growth length. It is demonstrated that InGaAs films with good morphology and large lateral growth areas have been obtained by μSAG on (111) Si dot areas with the diameter of 2 μm and the pitch of 5 μm using metal‐organic vapor phase epitaxy (MOVPE). This result suggests that μSAG using MOVPE is a promising technique for III‐V‐On‐Insulator structures on Si substrates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)