Ga-Doped ZnS Nanowires as Precursors for ZnO/ZnGa2O4 Nanotubes

Ga‐doped ZnS nanowires are used as precursors for the preparation of ZnO/ZnGa2O4 composite nanotubes, as shown in the figure. Oxidation of the nanowires induces phase separation resulting in the formation of ZnO/ZnGa2O4 phosphor heterostructures. The nanowires essentially serve as both precursors an...

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Published inAdvanced materials (Weinheim) Vol. 20; no. 4; pp. 810 - 814
Main Authors Gautam, U. K., Bando, Y., Zhan, J., Costa, P. M. F. J., Fang, X. S., Golberg, D.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 18.02.2008
WILEY‐VCH Verlag
Subjects
Gallium
inorganic
Nanotubes
Nanotubes, inorganic
Nanowires
Nanowires, semiconductor
semiconductor
Template-assisted synthesis
Zinc sulfide
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Summary:Ga‐doped ZnS nanowires are used as precursors for the preparation of ZnO/ZnGa2O4 composite nanotubes, as shown in the figure. Oxidation of the nanowires induces phase separation resulting in the formation of ZnO/ZnGa2O4 phosphor heterostructures. The nanowires essentially serve as both precursors and templates for the fabrication of the nanotubes.
Bibliography:Japan Society for the Promotion of Science (JSPS)
National Institute for Materials Science, Tsukuba, Japan
NSFC - No. 20501014
istex:6B6CD2ADE80FBC2CABF79D65F8CC56E2453F815C
ark:/67375/WNG-P8MP6Q6B-2
973 Program - No. 2007CB936602
ArticleID:ADMA200701761
X.S.F. thanks the Japan Society for the Promotion of Science (JSPS) for a support in the form of a fellowship tenable at the National Institute for Materials Science, Tsukuba, Japan. J.H.Z. thanks financial support from NSFC 20501014 and 973 Program 2007CB936602. Supporting Information is available online from Wiley InterScience or from the author.
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SourceType-Scholarly Journals-1
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ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200701761