Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing

Herein we report on the positive Seebeck coefficient S = 162 μV K−1 of niobium (Nb)-doped MoS2 films prepared by sputtering and activation of Nb atoms by sulfur vapor annealing. The p-type doping achieved via these processes is discussed based on changes in chemical bonding states and resistivity be...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 61; no. 7; pp. 075506 - 75513
Main Authors Horiguchi, Taiga, Hamada, Takuya, Hamada, Masaya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.07.2022
Japanese Journal of Applied Physics
Subjects
Annealing
Atomic properties
Chemical bonds
Doping
Molybdenum disulfide
Nanoelectronics
Niobium
Seebeck coefficient
Seebeck effect
Sputtering
Sulfur
thermoelectric generator
transition metal dichalcogenides
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Summary:Herein we report on the positive Seebeck coefficient S = 162 μV K−1 of niobium (Nb)-doped MoS2 films prepared by sputtering and activation of Nb atoms by sulfur vapor annealing. The p-type doping achieved via these processes is discussed based on changes in chemical bonding states and resistivity behavior in terms of annealing and measurement temperatures. The results of this study provide a new option for p-type doping of MoS2 films and are expected to contribute to the development of nanoelectronics and a smart society.
Bibliography:JJAP-104328.R1
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac7621