Fabrication of Cu2ZnSnSe4 thin films by selenization of precursor using Cu2ZnSnSe4 compound for photovoltaic applications

• Published in: Physica status solidi. C Vol. 12; no. 6; pp. 729 - 732
• Main Authors: Nakashima, M., Yamaguchi, T., Kusumoto, K., Yukawa, S., Sasano, J., Izaki, M.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.06.2015; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: Cu2ZnSnSe4; selenization; solar cell
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.201400279

Cu2ZnSnSe4 ingot was synthesized and then used it and Na2Se powder as evaporation materials to prepare a precursor for selenization process in order to fabricate Cu2ZnSnSe4 thin films for solar cell applications. From EPMA analysis, the Sn content in the thin films was approximately constant with increasing Sn mole ratio and the Se content was under 50 at.% in the first experiment. The Se content in the thin films increased to around 50 at.% by the addition of Se layer in second experiment. XRD study showed that the thin films had a kesterite phase in Cu2ZnSnSe4. The Se layer addition enhanced to grow thin films having a close‐packed structure and columnar grains. Cu2ZnSnSe4 thin film solar cells demonstrated Voc= 282 mV, Isc= 3.00 mA/cm2. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)