Epitaxial growth of perovskite-type oxide thin film on (111)SrTiO3 substrate using (101)PdO as a buffer layer

• Published in: Japanese Journal of Applied Physics Vol. 57; no. 11S
• Main Authors: Tanaka, Hiroki, Uchiyama, Kiyoshi, Oikawa, Takahiro, Shimizu, Takao, Funakubo, Hiroshi
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.11.2018
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.57.11UF04

(111)SrTiO3 (STO), (101)PdO on (111)Pd, and (110)SrRuO3 (SRO) on (101)PdO were successfully grown epitaxially and their crystallographic relationships were ascertained by X-ray diffraction (XRD) analysis. The epitaxial growth of (111)Pd was easily obtained on the (111)STO substrate by sputtering method. (101)PdO, obtained by the surface oxidization of Pd, appeared to be epitaxially grown on (111)Pd//(111)STO with 6-fold symmetrical variants. In addition, SRO deposited on (101)PdO//Pd//STO also showed 6-fold symmetrical pole figure spots of (110)SRO, which suggests that 6 different types of (110)-oriented SRO variants coexisted in this epitaxially grown (110)SRO film. We consider that this result can also be applied to polycrystalline (110)-oriented SRO deposited on the (111)Pt/SiO2/Si substrate with a (101)PdO//(111)Pd buffer layer.