Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness

Substrate roughness affects the physical and electrical properties of deposited layered materials. However, the quantitative relationship is unknown. In this work, a quantitative analysis of sputter-deposited MoS2 films on an SiO2 substrate was conducted. Flattening the substrate helped realize an M...

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Published inApplied physics express Vol. 10; no. 4
Main Authors Ohashi, Takumi, Muneta, Iriya, Matsuura, Kentaro, Ishihara, Seiya, Hibino, Yusuke, Sawamoto, Naomi, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ogura, Atsushi, Wakabayashi, Hitoshi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.04.2017
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Summary:Substrate roughness affects the physical and electrical properties of deposited layered materials. However, the quantitative relationship is unknown. In this work, a quantitative analysis of sputter-deposited MoS2 films on an SiO2 substrate was conducted. Flattening the substrate helped realize an MoS2 structure closer to the ideal honeycomb structure and a Hall mobility of ∼26 cm2/(V·s) and a carrier density of ∼1016 cm−3 (less than that of exfoliated MoS2 by 104). These results stress the necessity of considering even roughness of the order of angstroms to improve the physical and electrical properties of atomically layered functional devices.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.10.041202