Electric Resistivity Measurements of Sb2Te3 and Ge2Sb2Te5 Melts Using Four-Terminal Method

In this work, we aim to determine the electric resistivities of liquid Sb 2 Te 3 and Ge 2 Sb 2 Te 5 . Electric resistivities were measured using the four-terminal method. First, the electric resistivities of liquid Ga and Sn were measured to establish this method. Second, the electric resistivities...

Full description

Saved in:
Bibliographic Details
Published inJpn J Appl Phys Vol. 49; no. 6; pp. 065802 - 065802-7
Main Authors Endo, Rie, Maeda, Shimpei, Jinnai, Yuri, Lan, Rui, Kuwahara, Masashi, Kobayashi, Yoshinao, Susa, Masahiro
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.06.2010
Online AccessGet full text

Cover

More Information
Summary:In this work, we aim to determine the electric resistivities of liquid Sb 2 Te 3 and Ge 2 Sb 2 Te 5 . Electric resistivities were measured using the four-terminal method. First, the electric resistivities of liquid Ga and Sn were measured to establish this method. Second, the electric resistivities of Sb 2 Te 3 and Ge 1.6 Sb 2.0 Te 5.0 were measured over temperature ranges between the respective melting temperatures of samples and 1020 K. The electric resistivity of Sb 2 Te 3 has been determined to be $4.36\pm 0.14$ \mbox{$\mu$}$\Omega$ m at 992 K. The uncertainty was determined on the basis of the guide to the expression of uncertainty in measurement. The electric resistivity of Ge 1.6 Sb 2.0 Te 5.0 is smaller than that of Sb 2 Te 3 . It is also found that both resistivities decrease with an increase in temperature; which indicates that both liquid materials behave as a semiconductor. Therefore, the pseudogap model was applied to derive the electrical activation energies.
Bibliography:(Color online) Schematic diagram of experimental setup for the measurements of (a) Ga and Sn and (b) Sb 2 Te 3 and Ge 2 Sb 2 Te 5 . (Color online) Schematic diagram of sample setup in electric furnace. Relationship between current ($I$) and voltage ($\Delta V$) in measurements of liquid Ga using Pt electrode. Relation between current ($I$) and voltage ($\Delta V$) for the measurement of liquid Sn using Pt electrode. Comparison between measured and recommended electric resistivities of liquid Ga and Sn using Pt and W electrodes. Temperature dependence of electric resistivity of Ga measured using Pt and W electrodes with recommended value determined by Iida and Guthrie. Temperature dependence of electric resistivity of Sn with values reported by Roll and Motz, Takeuchi and Endo, Pokoeny and Astrom, Jia et al. , and Iida and Guthrie. Relationship between current ($I$) and voltage ($\Delta V$) for the measurement of liquid Sb 2 Te 3 at 992 K. Electric resistivity of Sb 2 Te 3 at 992 K against holding time. Temperature dependence of electric resistivity of Sb 2 Te 3 using W electrode with values reported by: (a) Vukalovich et al. * , (b) Glazov * , (c) Enderby and Walsh * , (d) Blakeway * , and (e) Onderka. * Calculated from conductivity. Temperature dependence of electric resistivity of Ge 1.6 Sb 2.0 Te 5.0 using Pt electrode. Schematic diagram of electron density of states (DOS) for pseudogap model. Natural logarithm of electric resistivity as functions of reciplocal of temperature for Sb 2 Te 3 and Ge 1.6 Sb 2.0 Te 5.0 .
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.065802