A CMOS Compatible, Forming Free TaOx ReRAM

Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance non-volatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. We demonstrate a wafer-scale process for resistive switching in tantalum oxid...

Full description

Saved in:
Bibliographic Details
Published inECS transactions Vol. 58; no. 5; pp. 59 - 65
Main Authors Lohn, Andrew J, Stevens, James E, Mickel, Patrick R, Hughart, David R, Marinella, Matthew J.
Format Journal Article
LanguageEnglish
Published United States The Electrochemical Society, Inc 31.08.2013
Electrochemical Society
Subjects
MATHEMATICS AND COMPUTING
Online AccessGet full text

Cover

More Information
Summary:Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance non-volatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. We demonstrate a wafer-scale process for resistive switching in tantalum oxide that is completely CMOS compatible. The resulting devices are forming-free and with greater than 1x105 cycle endurance.
Bibliography:AC04-94AL85000
HP Labs, Palo Alto, CA (United States)
SAND2013-5922J
USDOE National Nuclear Security Administration (NNSA)
ISSN:1938-5862
1938-6737
1938-6737
DOI:10.1149/05805.0059ecst