Rapid annealing of reactively sputtered precursors for Cu2ZnSnS4 solar cells

ABSTRACT Cu2ZnSnS4 (CZTS) is a promising thin‐film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2. We introduce a two‐step process for fabrication of CZTS films, involving reactive sputtering of a Cu‐Zn‐Sn‐S precursor followed by rapid anne...

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Published inProgress in photovoltaics Vol. 22; no. 1; pp. 10 - 17
Main Authors Scragg, Jonathan J., Ericson, Tove, Fontané, Xavier, Izquierdo-Roca, Victor, Pérez-Rodríguez, Alejandro, Kubart, Tomas, Edoff, Marika, Platzer-Björkman, Charlotte
Format Journal Article
LanguageEnglish
Published Bognor Regis Blackwell Publishing Ltd 01.01.2014
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Abstract ABSTRACT Cu2ZnSnS4 (CZTS) is a promising thin‐film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2. We introduce a two‐step process for fabrication of CZTS films, involving reactive sputtering of a Cu‐Zn‐Sn‐S precursor followed by rapid annealing. X‐ray diffraction and Raman measurements of the sputtered precursor suggest that it is in a disordered, metastable CZTS phase, similar to the high‐temperature cubic modification reported for CZTS. A few minutes of annealing at 550 °C are sufficient to produce crystalline CZTS films with grain sizes in the micrometer range. The first reported device using this approach has an AM1.5 efficiency of 4.6%, with Jsc and Voc both appearing to be limited by interface recombination. Copyright © 2012 John Wiley & Sons, Ltd. Cu2ZnSnS4 is a promising thin‐film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2. Here, we demonstrate the development of large Cu2ZnSnS4 grains during rapid annealing of reactively sputtered Cu‐Zn‐Sn‐S precursor films. A metastable precursor phase is proposed to explain structural properties and the high rate of grain growth.
AbstractList Cu 2 ZnSnS 4  (CZTS) is a promising thin-film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se 2 . We introduce a two-step process for fabrication of CZTS films, involving reactive sputtering of a Cu-Zn-Sn-S precursor followed by rapid annealing. X-ray diffraction and Raman measurements of the sputtered precursor suggest that it is in a disordered, metastable CZTS phase, similar to the high-temperature cubic modification reported for CZTS. A few minutes of annealing at 550 °C are sufficient to produce crystalline CZTS films with grain sizes in the micrometer range. The first reported device using this approach has an AM1.5 efficiency of 4.6%, with  J sc  and  V oc  both appearing to be limited by interface recombination. 
ABSTRACT Cu2ZnSnS4 (CZTS) is a promising thin‐film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2. We introduce a two‐step process for fabrication of CZTS films, involving reactive sputtering of a Cu‐Zn‐Sn‐S precursor followed by rapid annealing. X‐ray diffraction and Raman measurements of the sputtered precursor suggest that it is in a disordered, metastable CZTS phase, similar to the high‐temperature cubic modification reported for CZTS. A few minutes of annealing at 550 °C are sufficient to produce crystalline CZTS films with grain sizes in the micrometer range. The first reported device using this approach has an AM1.5 efficiency of 4.6%, with Jsc and Voc both appearing to be limited by interface recombination. Copyright © 2012 John Wiley & Sons, Ltd. Cu2ZnSnS4 is a promising thin‐film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2. Here, we demonstrate the development of large Cu2ZnSnS4 grains during rapid annealing of reactively sputtered Cu‐Zn‐Sn‐S precursor films. A metastable precursor phase is proposed to explain structural properties and the high rate of grain growth.
Cu2ZnSnS4 (CZTS) is a promising thin-film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2. We introduce a two-step process for fabrication of CZTS films, involving reactive sputtering of a Cu-Zn-Sn-S precursor followed by rapid annealing. X-ray diffraction and Raman measurements of the sputtered precursor suggest that it is in a disordered, metastable CZTS phase, similar to the high-temperature cubic modification reported for CZTS. A few minutes of annealing at 550°C are sufficient to produce crystalline CZTS films with grain sizes in the micrometer range. The first reported device using this approach has an AM1.5 efficiency of 4.6%, with Jsc and Voc both appearing to be limited by interface recombination. Copyright © 2012 John Wiley & Sons, Ltd. [PUBLICATION ABSTRACT]
Author Fontané, Xavier
Izquierdo-Roca, Victor
Kubart, Tomas
Ericson, Tove
Edoff, Marika
Scragg, Jonathan J.
Pérez-Rodríguez, Alejandro
Platzer-Björkman, Charlotte
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  email: Correspondence: Jonathan Scragg, Ångström Solar Center, Solid State Electronics, Uppsala University, 751 21 Uppsala, Sweden., jonathan.scragg@angstrom.uu.se
  organization: Ångström Solar Center, Solid State Electronics, Uppsala University, 751 21, Uppsala, Sweden
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  surname: Platzer-Björkman
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Issue 1
Keywords Performance evaluation
Grain size
Grain size analysis
Absorbent material
ZnSnS
kesterite
CZTS
High temperature
Rapid annealing
Tin sulfide
thin film solar cells
X ray diffraction
Zinc
Thin film
Metastable phase
Solar cell
Crystalline material
Zinc sulfide
Cu
Thin film cell
Copper sulfide
Reactive sputtering
Copper
sulfides
Language English
License CC BY 4.0
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PublicationDate January 2014
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PublicationTitle Progress in photovoltaics
PublicationTitleAlternate Prog. Photovolt: Res. Appl
PublicationYear 2014
Publisher Blackwell Publishing Ltd
Wiley
Wiley Subscription Services, Inc
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Snippet ABSTRACT Cu2ZnSnS4 (CZTS) is a promising thin‐film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2....
Cu2ZnSnS4 (CZTS) is a promising thin-film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2. We...
Cu 2 ZnSnS 4  (CZTS) is a promising thin-film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se 2 . We...
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SubjectTerms Applied sciences
Cu2ZnSnS4
CZTS
Electrical engineering, electronics and photonics
Electronics
Elektronik
Elektroteknik, elektronik och fotonik
Energy
Engineering Science with specialization in Electronics
Exact sciences and technology
kesterite
Natural energy
Photovoltaic conversion
reactive sputtering
Solar cells. Photoelectrochemical cells
Solar energy
sulfides
TECHNOLOGY
TEKNIKVETENSKAP
Teknisk fysik med inriktning mot elektronik
thin film solar cells
Title Rapid annealing of reactively sputtered precursors for Cu2ZnSnS4 solar cells
URI https://api.istex.fr/ark:/67375/WNG-4W3D51X9-2/fulltext.pdf
https://onlinelibrary.wiley.com/doi/abs/10.1002%2Fpip.2265
https://www.proquest.com/docview/1468157946/abstract/
https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-180994
Volume 22
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