Synthesis and material properties of Cu–III–VI2 chalcopyrite thin films

• Published in: Journal of physics. D, Applied physics Vol. 40; no. 18; pp. 5663 - 5665
• Main Authors: Aissaoui, O, Mehdaoui, S, Bechiri, L, Benabdeslem, M, Benslim, N, Amara, A, Mahdjoubi, L, Nouet, G
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 21.09.2007; Institute of Physics
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other semiconductors; Physics; Electrical conductivity; Indium selenides; XRD; Absorption coefficients; Preferred orientation; Thin films; Copper selenides; Energy gap; Chalcopyrite; Temperature effects; Optical properties; Thermal annealing; Activation energy
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/40/18/021

Thin films of CuInSe2 have been fabricated by thermal annealing of evaporated elemental layers of Cu, In and Se onto Si (1 0 0) and Corning glass 7059 substrates at room temperature. Structural, optical and electrical properties of the layers were studied. X-ray diffraction revealed that the film was single phase with chalcopyrite structure and preferred orientation along the (1 1 2) plane. The temperature dependence of electrical conductivity exhibited two activation energies and the optical studies showed that the absorption coefficient of this film was above 3 X 104 cm-1 and the band gap was found to be 0.98 eV.