Modification of ferroelectricity in heteroepitaxial (Ba, Sr)TiO3 films for non-volatile memory applications

Modification of ferroelectricity in heteroepitaxial Ba x Sr 1-x TiO 3 (BST) films by making use of lattice misfit was investigated. Theoretical calculation suggested that application of two-dimensional compressive stress of 3 GPa to the ferroelectric crystal would result in Curie temperature increas...

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Published inIntegrated ferroelectrics Vol. 21; no. 1-4; pp. 197 - 206
Main Authors Abe, Kazuhide, Yanase, Naoko, Sano, Kenya, Izuha, Mitsuo, Fukushima, Noburu, Kawakubo, Takashi
Format Journal Article
LanguageEnglish
Published Taylor & Francis Group 01.09.1998
Subjects
Curie temperature
Heteroepitaxial growth
Lattice misfit
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Summary:Modification of ferroelectricity in heteroepitaxial Ba x Sr 1-x TiO 3 (BST) films by making use of lattice misfit was investigated. Theoretical calculation suggested that application of two-dimensional compressive stress of 3 GPa to the ferroelectric crystal would result in Curie temperature increase by 270°C. This theoretical prediction was experimentally confirmed. Heteroepitaxial Ba 0.6 Sr 0.4 TiO 3 films grown on SrRuO 3 /SrTiO 3 substrates exhibited ferroelectric hysteresis at 200°C, even though the inherent Curie temperature is known to be 0°C. The possibility of heteroepitaxial BST films for ferroelectric non-volatile memory applications and their advantages were pointed out.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589808202063