Ferroelectricity of heteroepitaxial Ba0.6Sr0.4TiO3 ultrathin films
Remanent polarization (2P r ) larger than 0.4 C/m 2 has been obtained in heteroepitaxial Ba 0.6 Sr 0.4 TiO 3 (BSTO) films, even though the thickness was reduced to as thin as 26 nm. Ferroelectricity is induced by 2-dimensional stress, which is caused by lattice mismatch between the dielectric film a...
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| Published in | Integrated ferroelectrics Vol. 17; no. 1-4; pp. 89 - 96 |
|---|---|
| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Taylor & Francis Group
01.09.1997
|
| Subjects | |
| Online Access | Get full text |
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| Abstract | Remanent polarization (2P
r
) larger than 0.4 C/m
2
has been obtained in heteroepitaxial Ba
0.6
Sr
0.4
TiO
3
(BSTO) films, even though the thickness was reduced to as thin as 26 nm. Ferroelectricity is induced by 2-dimensional stress, which is caused by lattice mismatch between the dielectric film and the bottom electrode (SrRuO
3
). The Curie temperature was confirmed to shift toward higher temperature by more than 200°C. These results constitute a significant advance toward the practical realization of ferroelectric nonvolatile memories with a large capacity of 256 M to 1 G bit. |
|---|---|
| AbstractList | Remanent polarization (2P
r
) larger than 0.4 C/m
2
has been obtained in heteroepitaxial Ba
0.6
Sr
0.4
TiO
3
(BSTO) films, even though the thickness was reduced to as thin as 26 nm. Ferroelectricity is induced by 2-dimensional stress, which is caused by lattice mismatch between the dielectric film and the bottom electrode (SrRuO
3
). The Curie temperature was confirmed to shift toward higher temperature by more than 200°C. These results constitute a significant advance toward the practical realization of ferroelectric nonvolatile memories with a large capacity of 256 M to 1 G bit. |
| Author | Abe, Kazuhide Kawakubo, Takashi Sano, Kenyo Komatsu, Shuichi Yanase, Naoko |
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| ContentType | Journal Article |
| Copyright | Copyright Taylor & Francis Group, LLC 1997 |
| Copyright_xml | – notice: Copyright Taylor & Francis Group, LLC 1997 |
| DOI | 10.1080/10584589708012984 |
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| Snippet | Remanent polarization (2P
r
) larger than 0.4 C/m
2
has been obtained in heteroepitaxial Ba
0.6
Sr
0.4
TiO
3
(BSTO) films, even though the thickness was... |
| SourceID | informaworld |
| SourceType | Enrichment Source Publisher |
| StartPage | 89 |
| SubjectTerms | heteroepitaxial growth stress-induced ferroelectricity |
| Title | Ferroelectricity of heteroepitaxial Ba0.6Sr0.4TiO3 ultrathin films |
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