Ferroelectricity of heteroepitaxial Ba0.6Sr0.4TiO3 ultrathin films

Remanent polarization (2P r ) larger than 0.4 C/m 2 has been obtained in heteroepitaxial Ba 0.6 Sr 0.4 TiO 3 (BSTO) films, even though the thickness was reduced to as thin as 26 nm. Ferroelectricity is induced by 2-dimensional stress, which is caused by lattice mismatch between the dielectric film a...

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Bibliographic Details
Published inIntegrated ferroelectrics Vol. 17; no. 1-4; pp. 89 - 96
Main Authors Abe, Kazuhide, Komatsu, Shuichi, Yanase, Naoko, Sano, Kenyo, Kawakubo, Takashi
Format Journal Article
LanguageEnglish
Published Taylor & Francis Group 01.09.1997
Subjects
heteroepitaxial growth
stress-induced ferroelectricity
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Summary:Remanent polarization (2P r ) larger than 0.4 C/m 2 has been obtained in heteroepitaxial Ba 0.6 Sr 0.4 TiO 3 (BSTO) films, even though the thickness was reduced to as thin as 26 nm. Ferroelectricity is induced by 2-dimensional stress, which is caused by lattice mismatch between the dielectric film and the bottom electrode (SrRuO 3 ). The Curie temperature was confirmed to shift toward higher temperature by more than 200°C. These results constitute a significant advance toward the practical realization of ferroelectric nonvolatile memories with a large capacity of 256 M to 1 G bit.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589708012984