Optimization of atomic layer deposition temperature of ZrO2 protective coat for GaInAsP photonic crystal nanolaser sensor

This study examined the effect of atomic layer deposition temperature of a ZrO2 protective coat on GaInAsP semiconductor photonic crystal nanolaser sensors. At low temperatures (around 100 °C), the nonradiative centers at the ZrO2/GaInAsP interfaces were reduced, and the laser operation and refracti...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 59; no. 1; pp. 1 - 3
Main Authors Sakata, Akihiro, Watanabe, Keisuke, Baba, Toshihiko
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.01.2020
Japanese Journal of Applied Physics
Subjects
Atomic layer epitaxy
Gallium indium arsenide phosphide
Ion recombination
Low temperature
Optimization
Photonic crystals
Refractivity
Zirconium dioxide
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Summary:This study examined the effect of atomic layer deposition temperature of a ZrO2 protective coat on GaInAsP semiconductor photonic crystal nanolaser sensors. At low temperatures (around 100 °C), the nonradiative centers at the ZrO2/GaInAsP interfaces were reduced, and the laser operation and refractive index sensing characteristics were stabilized. At high temperatures (around 250 °C), the nonradiative centers increase, which, in turn, improves the ion sensitivity based on surface recombination.
Bibliography:JJAP-101715.R1
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab5635