Photochromic Properties of the Doped Bi12SiO20 Crystals

• Published in: Ferroelectrics Vol. 322; no. 1; pp. 69 - 74
• Main Authors: Panchenko, T. V., Kopylova, S. Yu
• Format: Journal Article
• Language: English
• Published: London Taylor & Francis Group 01.01.2005; Taylor and Francis
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; crystals; doped Bi; doping ions; Electronic transport in condensed matter; Exact sciences and technology; inducing the doped photoconductivity; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Photochromic effect; Photoconduction and photovoltaic effects; photodielectric effects; Physics; SiO; Photochromism; Doping; Optical transition; Bismuth oxides; doped Bi12SiO20 crystals; doping ions; Monocrystals; Impurities; Shallow level; Silicon oxides; inducing the doped photoconductivity; Photoconductivity; Photochromic effect
• ISSN: 0015-0193; 1563-5112
• DOI: 10.1080/00150190500315251

The correlation between photochromic effect and the effect of inducing the photoconductivity in undoped and Al-, Ga-, Sn-, Cr-, Mn-, V-, Fe-, Cu-, Ag-, Mo-doped Bi 12 SiO 20 single crystals have been investigated. It is shown that the photochromic effect is conditioned by the intra-center optical transitions in deep centers, while the effect of inducing the doped photoconductivity is conditioned by filling of the shallow levels in forbidden zone. Characteristic peculiarities of doped ions influence on the photochromic properties of Bi 12 SiO 20 crystals are studied.