High quality PVD-MoS2 film on plasma-ALD-SiO2 underlaying material for CFET integration

PVD-MoS 2 film on various underlaying materials for a CFET was investigated. It is confirmed that the chemical composition ratio and crystallinity of MoS 2 films are significantly affected by the type of underlying material. A high-quality MoS 2 film was obtained on a plasma-ALD (Atomic-Layer Deposi...

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Published in2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 1 - 3
Main Authors Matsunaga, Naoki, Imai, Shinya, Shirokura, Takanori, Tsutsui, Kazuo, Kakushima, Kuniyuki, Wakabayashi, Hitoshi
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 03.03.2024
Subjects
CFET
Fast Fourier transforms
molybdenum disulfide (MoS2)
plasma-ALD SiO2
Raman spectroscopy and RF magnetron sputtering
Rough surfaces
Silicon compounds
Sulfur
Surface roughness
Three-dimensional displays
transition metal dichalcogenide
Velocity measurement
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DOI10.1109/EDTM58488.2024.10511906

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Summary:PVD-MoS 2 film on various underlaying materials for a CFET was investigated. It is confirmed that the chemical composition ratio and crystallinity of MoS 2 films are significantly affected by the type of underlying material. A high-quality MoS 2 film was obtained on a plasma-ALD (Atomic-Layer Deposition) SiO 2 film. This result can guide the application of MoS 2 in future electronic systems such as the CFET.
DOI:10.1109/EDTM58488.2024.10511906