BOX-less waveguide Ge PD for bulk-Si based silicon photonic platform

We present BOX-less waveguide Ge PD for bulk-Si optical interface platform. Despite of defective crystalline of Si-core layer, it shows low dark current (350 nA), high responsivity (1.05 A/W), and high speed operation (25 Gb/s).

Saved in:
Bibliographic Details
Published inOFC 2014 pp. 1 - 3
Main Authors Ji, H. -C., Cho, K. S., Lee, B. S., Cho, K. Y., Choi, S. H., Kim, J. H., Shin, Y. H., Kim, S. G., Lee, S. Y., Byun, H. I., Parmar, S., Nejadmalayeri, A. H., Kim, D. H., Bok, J. K., Park, Y. S., Shin, D. J., Joe, I. S., Kuh, B. J., Kim, B. S., Kim, K. C., Choi, H. M., Ha, K. H.
Format Conference Proceeding
LanguageEnglish
Published OSA 01.03.2014
Subjects
Integrated optics
Optical coupling
Optical imaging
Optical waveguides
Silicon
Substrates
Voltage measurement
Online AccessGet full text

Cover

More Information
Summary:We present BOX-less waveguide Ge PD for bulk-Si optical interface platform. Despite of defective crystalline of Si-core layer, it shows low dark current (350 nA), high responsivity (1.05 A/W), and high speed operation (25 Gb/s).
DOI:10.1364/OFC.2014.Th4C.2