Transport properties in filled skutterudite GdRu4P12

We have investigated the Hall effect in GdRu4P12 for the first time. From the temperature and magnetic field dependences of the Hall effect along with the magnetoresistance, we evaluated the change in carrier density across the antiferromagnetic (AF) transition accompanied by the Fermi surface recon...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 200; no. 1; p. 012222
Main Authors Watanabe, M, Tanaka, K, Tatsuoka, S, Saito, T, Miyazaki, R, Takeda, K, Namiki, T, Kuwahara, K, Higashinaka, R, Aoki, Y, Sato, H
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.01.2010
Subjects
Antiferromagnetism
Carrier density
Electromagnetism
Fermi surfaces
Hall effect
Magnetism
Magnetoresistance
Magnetoresistivity
Physics
Transport properties
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Summary:We have investigated the Hall effect in GdRu4P12 for the first time. From the temperature and magnetic field dependences of the Hall effect along with the magnetoresistance, we evaluated the change in carrier density across the antiferromagnetic (AF) transition accompanied by the Fermi surface reconstruction. About one tenth of carriers remain in the AF phase, in contrast with PrRu4P12 where most of the carriers disappear in the ordered phase. The anomalous part of Hall coefficient in GdRu4P12 is smaller than those in the PrRu4P12 and PrFe4P12, which is consistent with the well localized nature of 4f electrons.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/200/1/012222