Large-area synthesis of high-quality monolayer 1T'-WTe2 flakes

• Published in: 2d materials Vol. 4; no. 2
• Main Authors: Naylor, Carl H, Parkin, William M, Gao, Zhaoli, Kang, Hojin, Noyan, Mehmet, Wexler, Robert B, Tan, Liang Z, Kim, Youngkuk, Kehayias, Christopher E, Streller, Frank, Zhou, Yu Ren, Carpick, Robert, Luo, Zhengtang, Park, Yung Woo, Rappe, Andrew M, Drndi, Marija, Kikkawa, James M, Johnson, A T Charlie
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.06.2017
• Subjects: chemical vapour deposition; monolayer; transition metal dichalcogenides; weak antilocalization; WTe
• ISSN: 2053-1583; 2053-1583
• DOI: 10.1088/2053-1583/aa5921

Large-area growth of monolayer films of the transition metal dichalcogenides is of the utmost importance in this rapidly advancing research area. The mechanical exfoliation method offers high quality monolayer material but it is a problematic approach when applied to materials that are not air stable. One important example is 1T'-WTe2, which in multilayer form is reported to possess a large non saturating magnetoresistance, pressure induced superconductivity, and a weak antilocalization effect, but electrical data for the monolayer is yet to be reported due to its rapid degradation in air. Here we report a reliable and reproducible large-area growth process for obtaining many monolayer 1T'-WTe2 flakes. We confirmed the composition and structure of monolayer 1T'-WTe2 flakes using x-ray photoelectron spectroscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Raman spectroscopy and aberration corrected transmission electron microscopy. We studied the time dependent degradation of monolayer 1T'-WTe2 under ambient conditions, and we used first-principles calculations to identify reaction with oxygen as the degradation mechanism. Finally we investigated the electrical properties of monolayer 1T'-WTe2 and found metallic conduction at low temperature along with a weak antilocalization effect that is evidence for strong spin-orbit coupling.