Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN

• Published in: Physica status solidi. C Vol. 11; no. 3-4; pp. 898 - 901
• Main Authors: Wei, D., Hossain, T., Nepal, N., Garces, N. Y., Hite, J. K., Meyer III, H. M., Eddy Jr, C. R., Edgar, J. H.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.04.2014; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: ALD; dielectric; GaN; m- plane
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.201300677

This study compares the physical, chemical and electrical properties of Al2O3 thin films deposited on gallium polar c‐ and nonpolar m ‐plane GaN substrates by atomic layer deposition (ALD). Correlations were sought between the film's structure, composition, and electrical properties. The thickness of the Al2O3 films was 19.2 nm as determined from a Si witness sample by spectroscopic ellipsometry. The gate dielectric was slightly aluminum‐rich (Al:O=1:1.3) as measured from X‐ray photoelectron spectroscopy (XPS) depth profile, and the oxide‐semiconductor interface carbon concentration was lower on c ‐plane GaN. The oxide's surface morphology was similar on both substrates, but was smoothest on c ‐plane GaN as determined by atomic force microscopy (AFM). Circular capacitors (50‐300 μm diameter) with Ni/Au (20/100 nm) metal contacts on top of the oxide were created by standard photolithography and e‐beam evaporation methods to form metal‐oxide‐semiconductor capacitors (MOSCAPs). The alumina deposited on c ‐plane GaN showed less hysteresis (0.15 V) than on m ‐plane GaN (0.24 V) in capacitance‐voltage (CV) characteristics, consistent with its better quality of this dielectric as evidenced by negligible carbon contamination and smooth oxide surface. These results demonstrate the promising potential of ALD Al2O3 on c ‐plane GaN, but further optimization of ALD is required to realize the best properties of Al2O3 on m ‐plane GaN. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)