The effect of metal-rich growth conditions on the microstructure of ScxGa1−xN films grown using molecular beam epitaxy

• Published in: Physica status solidi. A, Applications and materials science Vol. 212; no. 12; pp. 2837 - 2842
• Main Authors: Tsui, H. C. L., Goff, L. E., Barradas, N. P., Alves, E., Pereira, S., Beere, H. E., Farrer, I., Nicoll, C. A., Ritchie, D. A., Moram, M. A.
• Format: Journal Article
• Language: English
• Published: Weinheim Blackwell Publishing Ltd 01.12.2015; Wiley Subscription Services, Inc
• Subjects: metal-rich growth; Microstructure; Molecular beam epitaxy; scandium gallium nitrides; thin films; transmission electron microscopy
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201532292

Epitaxial ScxGa1−xN films with 0 ≤ x ≤ 0.50 were grown using molecular beam epitaxy under metal‐rich conditions. The ScxGa1−xN growth rate increased with increasing Sc flux despite the use of metal‐rich growth conditions, which is attributed to the catalytic decomposition of N2 induced by the presence of Sc. Microstructural analysis showed that phase‐pure wurtzite ScxGa1−xN was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen‐rich conditions, indicating that the use of metal‐rich conditions can help to stabilise wurtzite phase ScxGa1−xN.