Influence Sputtering Conditions on Electrical Characteristics of Si-LiNbO3 Heterostructures Formed by Radio-Frequency Magnetron Sputtering

Polycrystalline LiNbO 3 films on (001)Si substrate were grown by radio-frequency magnetron sputtering process at different sputtering conditions. X-ray diffraction analysis showed that films formed in Ar environment (P = 5.0 × 10 −1 Pa) having two-phase composition (LiNbO 3 , LiNb 3 O 8 ) transforme...

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Bibliographic Details
Published inMolecular Crystals and Liquid Crystals Vol. 603; no. 1; pp. 202 - 215
Main Authors Sumets, M., Ievlev, V., Kostyuchenko, A., Kuz'mina, V.
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis 02.11.2014
Taylor & Francis Ltd
Subjects
Diffraction
electrical properties
ferroelectrics
heterojunctions
Lithium niobate
Plasma
Polycrystals
Pressure
Radio frequency
sputtering
Substrates
thin films
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Summary:Polycrystalline LiNbO 3 films on (001)Si substrate were grown by radio-frequency magnetron sputtering process at different sputtering conditions. X-ray diffraction analysis showed that films formed in Ar environment (P = 5.0 × 10 −1 Pa) having two-phase composition (LiNbO 3 , LiNb 3 O 8 ) transformed into c-axes-oriented LiNbO 3 films when Ar pressure declined up to P = 1.5 × 10 −1 Pa. This induced an increase in positive oxide charge and coercive field due to formation of defects in the LiNbO 3 layer. Using Ar + O 2 reactive gas mixture led to decline in defect formation (positive oxide charge) and coercive field. Current-voltage and capacitance-voltage analyses demonstrated that barrier properties of the Si-LiNbO 3 heterojunctions are affected by the plasma composition.
ISSN:1542-1406
1563-5287
1527-1943
DOI:10.1080/15421406.2014.967607