Novel InN growth method under In-rich condition on GaN/Al2O3 (0001) templates

A novel technique is proposed for the growth of an InN film on a GaN/Al2O3 (0001) template by radio‐frequency plasma‐excited molecular beam epitaxy (RF‐MBE). The method involves 1) InN growth under an In‐rich condition and 2) additional nitrogen radical irradiation after the InN growth under an In‐r...

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Bibliographic Details
Published inPhysica status solidi. C Vol. 6; no. S2; pp. S360 - S363
Main Authors Yamaguchi, Tomohiro, Muto, Daisuke, Araki, Tsutomu, Maeda, Narihiko, Nanishi, Yasushi
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.06.2009
WILEY‐VCH Verlag
Subjects
61.05.jh
68.55.ag
73.61.Ey
81.05.Ea
81.15.Hi
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Summary:A novel technique is proposed for the growth of an InN film on a GaN/Al2O3 (0001) template by radio‐frequency plasma‐excited molecular beam epitaxy (RF‐MBE). The method involves 1) InN growth under an In‐rich condition and 2) additional nitrogen radical irradiation after the InN growth under an In‐rich condition. Excess In that appeared on the InN surface in the InN growth under an In‐rich condition is transformed to InN by the additional nitrogen radical irradiation. The effective V/III ratio is easily controlled by monitoring the intensity in a reflection high‐energy electron diffraction (RHEED) pattern. The growth of the InN film by repeating the InN growth under an In‐rich condition and the additional nitrogen radical irradiation is also demonstrated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:Scientific Research (A) - No. 18206003
ArticleID:PSSC200880806
istex:F6D7F490EF3FCA61025DF2ECC00C48614A9FE495
ark:/67375/WNG-5GF2F4S9-K
MEXT through Grant-in-Aids for Scientific Research in Priority Areas "Optoelectronics Frontier by Nitride Semiconductor" - No. 18069012
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.200880806