Epitaxial growth of thin TiO2 films on the Au covered Fe(100) surface

• Published in: Crystal research and technology (1979) Vol. 49; no. 8; pp. 587 - 593
• Main Authors: Brambilla, A., Calloni, A., Berti, G., Bussetti, G., Duò, L., Ciccacci, F.
• Format: Journal Article
• Language: English
• Published: Blackwell Publishing Ltd 01.08.2014
• Subjects: iron; low-energy electron diffraction; thin films; titanium oxide; X-ray photoemission spectroscopy
• ISSN: 0232-1300; 1521-4079
• DOI: 10.1002/crat.201300416

It is known that the growth of perfectly stoichiometric thin films of TiO2 on Fe(100) can be obtained by molecular beam epitaxy in a molecular oxygen atmosphere only if the growth temperature is increased to 300 °C, at the expense of a great interfacial mixing. Such a mixing is significantly reduced at room temperature, where more defective films develop. Here, we investigate the possibility of using an Au buffer layer to obtain better quality TiO2 films on Fe(100). X‐ray Photoemission Spectroscopy and Low Energy Electron Diffraction are employed to investigate the electronic and structural properties of the TiO2/Au/Fe interfaces. We obtain crystalline rutile films with a reduced number of defects when compared to room temperature grown TiO2/Fe(100) samples but still subject to interface mixing effects. In this work, we investigate the possibility of growing high‐quality TiO2 thin films on Fe(100) by intercalating a thin Au buffer layer. X‐ray Photoemission Spectroscopy and Low Energy Electron Diffraction are employed to investigate the electronic and structural properties of the TiO2/Au/Fe interfaces. We obtain crystalline rutile films with a reduced number of defects when compared to room temperature grown TiO2/Fe(100) samples but with some degree of interface mixing.