Optical properties of AgInS2 thin films prepared by sulfurization of evaporated metal precursors

Photoluminescence study has been demonstrated for AgInS2 thin films prepared by sulfurization of metal‐evaporated precursors as well as XRD measurement. We have found the 1.79 eV DAP recombination emission for the stoichiometric thin film containing both chalcopyrite and orthorhombic form. (© 2009 W...

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Bibliographic Details
Published inPhysica status solidi. C Vol. 6; no. 5; pp. 1137 - 1140
Main Authors Nakamura, Shigeyuki, Seto, Satoru
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.05.2009
WILEY‐VCH Verlag
Subjects
61.05.cp
68.55.ag
73.61.Le
78.55.Hx
81.15.Ef
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Summary:Photoluminescence study has been demonstrated for AgInS2 thin films prepared by sulfurization of metal‐evaporated precursors as well as XRD measurement. We have found the 1.79 eV DAP recombination emission for the stoichiometric thin film containing both chalcopyrite and orthorhombic form. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:ark:/67375/WNG-SGT344FF-S
istex:683697215FDDCCD9178F1C666FA77D658B891274
ArticleID:PSSC200881153
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.200881153