Effect of annealing for CuInS2 thin films prepared from Cu-rich ternary compound

• Published in: Physica status solidi. C Vol. 6; no. 5; pp. 1030 - 1033
• Main Authors: Akaki, Yoji, Nakamura, Shigeuki, Nomoto, Keita, Yoshitake, Tsuyoshi, Yoshino, Kenji
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.05.2009; WILEY‐VCH Verlag
• Subjects: 61.05.cp; 71.55.Ht; 72.80.Jc; 73.20.Hb; 73.61.Le; 81.15.Ef
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.200881211

Evaporated CuInS2 films using a single‐source were annealed in H2S atmosphere from 250 to 500 °C for 60 min. after the evaporation. Polycrystalline CuInS2 powder grown by a hot‐press method was employed as a source material. Cu/In ratios of the source were 1.0, 1.2 and 1.5. All the films annealed above 350 °C were of CuInS2 single phase regardless of the Cu/In ratio of the source material. The films prepared from the source material of the Cu/In ratio of 1.5 became Cu‐rich films, which had the Cu/In ratio of 1.37. Carrier concentrations, resistivities and mobilities of the films annealed above 350 °C prepared from the source material of the Cu/In ratio of 1.5 were approximately 1×1021 cm–3, 0.1 Ωcm and 0.1 cm2/Vs, respectively, at room temperature. The activation energy of the film annealed at 400 °C was evaluated to be 6.5 meV. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)