High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3 Thin Film as N-Type Layer

High-efficiency heterojunction solar cells consisting of a nondoped Ga 2 O 3 thin film as an n-type semiconductor layer and a p-type Cu 2 O sheet as the active layer as well as the substrate, prepared by thermally oxidizing a Cu sheet, are demonstrated. The use of an n-type Ga 2 O 3 thin film can gr...

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Bibliographic Details
Published inApplied physics express Vol. 6; no. 4; pp. 044101 - 044101-4
Main Authors Minami, Tadatsugu, Nishi, Yuki, Miyata, Toshihiro
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.04.2013
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Summary:High-efficiency heterojunction solar cells consisting of a nondoped Ga 2 O 3 thin film as an n-type semiconductor layer and a p-type Cu 2 O sheet as the active layer as well as the substrate, prepared by thermally oxidizing a Cu sheet, are demonstrated. The use of an n-type Ga 2 O 3 thin film can greatly improve the performance of n-Ga 2 O 3 /p-Cu 2 O heterojunction solar cells. The highest efficiency of 5.38% was obtained in an Al-doped ZnO/Ga 2 O 3 /Cu 2 O heterojunction solar cell fabricated with an n-Ga 2 O 3 thin-film layer prepared at room temperature with a thickness of 75 nm by a pulsed laser deposition method.
Bibliography:Obtained (a) $V_{\text{OC}}$ and (b) $\eta$ in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells fabricated with Ga 2 O 3 thin films prepared at various O 2 gas pressures. Obtained $\eta$ in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells fabricated using Ga 2 O 3 thin films prepared with various thicknesses. $J$--$V$ characteristics obtained in Cu 2 O-based heterojunction solar cells with various structures measured under (a) AM1.5G solar illumination and (b) dark conditions. EQE spectra observed from Cu 2 O-based heterojunction solar cells with various structures.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.044101