Preliminary Studies on the Reflectance Characteristics of graphene/SiO2 under Different Applied Voltages for Optical Modulation Applications

A preliminary study on the interband transition of graphene was done via reflectance spectra of graphene/SiO2 sample at various applied potential. Prior to that, Raman spectroscopy and four-point probe measurement was done on graphene/SiO2 sample. It was found that the sample consisted of monolayer...

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Published inJournal of physics. Conference series Vol. 995; no. 1
Main Authors Beh, K P, Yam, F K, Abdalrheem, Raed, Ng, Y Z, Suhaimi, F H A, Lim, H S, Mat Jafri, M Z
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.04.2018
Subjects
Graphene
Physics
Post-production processing
Raman spectroscopy
Reflectance
Silicon dioxide
Spectrum analysis
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Summary:A preliminary study on the interband transition of graphene was done via reflectance spectra of graphene/SiO2 sample at various applied potential. Prior to that, Raman spectroscopy and four-point probe measurement was done on graphene/SiO2 sample. It was found that the sample consisted of monolayer graphene with sheet resistance around 402.32 Ω/□. Post-processing of the reflectance data lead to the plot of ratio of change in reflectance towards reflectance at 0 V (ΔR/R) against applied potential. From there, the ratio increases along with applied potential, indicative of higher absorption due to interband transition.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/995/1/012058