Photosensitive structures on the basis of magnetic semiconductors FeIn2S4

In this work, which is in line with the new promising areas of semiconductor electronics, we present the results of a study of the photovoltaic properties of photosensitive structures based on Fe and In2S4 to define the application prospects of this new magnetic semiconductor for use in photonics.

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 917; no. 9
Main Authors Fadeenko, V B, Davydov, V V, Rud', V Yu, Glinushkin, A P, Yu Rud', V, Shpunt, V Ch
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2017
Subjects
Magnetic semiconductors
Photosensitivity
Physics
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Summary:In this work, which is in line with the new promising areas of semiconductor electronics, we present the results of a study of the photovoltaic properties of photosensitive structures based on Fe and In2S4 to define the application prospects of this new magnetic semiconductor for use in photonics.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/917/9/092015