Crystallization behavior and ferroelectric property of HfO2-ZrO2 films fabricated by chemical solution deposition

In this study, we investigate the crystallization behavior of the precursor HfO2-ZrO2 (HZO) thin film to increase the fraction of the ferroelectric phase with orthorhombic symmetry in the resulting crystallized films. The precursor film of Hf0.5Zr0.5O2 prepared by the chemical solution deposition (C...

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Published inJapanese Journal of Applied Physics Vol. 57; no. 11S
Main Authors Nakayama, Shuhei, Funakubo, Hiroshi, Uchida, Hiroshi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.11.2018
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Abstract In this study, we investigate the crystallization behavior of the precursor HfO2-ZrO2 (HZO) thin film to increase the fraction of the ferroelectric phase with orthorhombic symmetry in the resulting crystallized films. The precursor film of Hf0.5Zr0.5O2 prepared by the chemical solution deposition (CSD) process was crystallized to the tetragonal phase (at 600 °C) or a mixture of the orthorhombic and monoclinic phases (at 700 °C and above), depending on the crystallization temperature. A saturated P-E hysteresis loop with a remanent polarization (Pr) of 8 µC/cm2 was observed for the HZO films crystallized at 700 °C, whereas a distorted P-E curve with a lower Pr value was confirmed for the film crystallized at 600 °C.
AbstractList In this study, we investigate the crystallization behavior of the precursor HfO2-ZrO2 (HZO) thin film to increase the fraction of the ferroelectric phase with orthorhombic symmetry in the resulting crystallized films. The precursor film of Hf0.5Zr0.5O2 prepared by the chemical solution deposition (CSD) process was crystallized to the tetragonal phase (at 600 °C) or a mixture of the orthorhombic and monoclinic phases (at 700 °C and above), depending on the crystallization temperature. A saturated P-E hysteresis loop with a remanent polarization (Pr) of 8 µC/cm2 was observed for the HZO films crystallized at 700 °C, whereas a distorted P-E curve with a lower Pr value was confirmed for the film crystallized at 600 °C.
Author Nakayama, Shuhei
Funakubo, Hiroshi
Uchida, Hiroshi
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  givenname: Hiroshi
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  fullname: Uchida, Hiroshi
  email: uchidah@sophia.ac.jp
  organization: Sophia University Department of Materials and Life Sciences, Chiyoda, Tokyo 102-8554, Japan
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Snippet In this study, we investigate the crystallization behavior of the precursor HfO2-ZrO2 (HZO) thin film to increase the fraction of the ferroelectric phase with...
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Title Crystallization behavior and ferroelectric property of HfO2-ZrO2 films fabricated by chemical solution deposition
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