Crystallization behavior and ferroelectric property of HfO2-ZrO2 films fabricated by chemical solution deposition

• Published in: Japanese Journal of Applied Physics Vol. 57; no. 11S
• Main Authors: Nakayama, Shuhei, Funakubo, Hiroshi, Uchida, Hiroshi
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.11.2018
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.57.11UF06

In this study, we investigate the crystallization behavior of the precursor HfO2-ZrO2 (HZO) thin film to increase the fraction of the ferroelectric phase with orthorhombic symmetry in the resulting crystallized films. The precursor film of Hf0.5Zr0.5O2 prepared by the chemical solution deposition (CSD) process was crystallized to the tetragonal phase (at 600 °C) or a mixture of the orthorhombic and monoclinic phases (at 700 °C and above), depending on the crystallization temperature. A saturated P-E hysteresis loop with a remanent polarization (Pr) of 8 µC/cm2 was observed for the HZO films crystallized at 700 °C, whereas a distorted P-E curve with a lower Pr value was confirmed for the film crystallized at 600 °C.