Ultrafast relaxation dynamics in GaN nanowires

Time-resolved optical measurements on GaN nanowires give insight into carrier relaxation dynamics on a femtosecond timescale, allowing us to understand the nature of defect states present in the nanostructure.

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Bibliographic Details
Published in2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference pp. 1 - 2
Main Authors Upadhya, P.C., Li, Q., Wang, G.T., Fischer, A.J., Taylor, A.J., Prasankumar, R.P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
Subjects
(320.7120) Ultrafast phenomena
(320.7130) Ultrafast processes in condensed matter
Gallium nitride
Integrated optics
Laboratories
Nanowires
Optical pulse generation
Optical pumping
Pulse amplifiers
Substrates
Temperature
Ultrafast optics
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Summary:Time-resolved optical measurements on GaN nanowires give insight into carrier relaxation dynamics on a femtosecond timescale, allowing us to understand the nature of defect states present in the nanostructure.
ISSN:2160-9004
DOI:10.1364/CLEO.2009.JTuD105