Ultrafast relaxation dynamics in GaN nanowires
Time-resolved optical measurements on GaN nanowires give insight into carrier relaxation dynamics on a femtosecond timescale, allowing us to understand the nature of defect states present in the nanostructure.
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Published in | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference pp. 1 - 2 |
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Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2009
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Subjects | |
Online Access | Get full text |
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Summary: | Time-resolved optical measurements on GaN nanowires give insight into carrier relaxation dynamics on a femtosecond timescale, allowing us to understand the nature of defect states present in the nanostructure. |
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ISSN: | 2160-9004 |
DOI: | 10.1364/CLEO.2009.JTuD105 |