"HVPE InGaN for LEDs- State of the art and horizons"

We will discuss results of InGaN material and device growth by HVPE. Application of new device concepts for LEDs arising from new HVPE capabilities will be discussed, including all-HVPE InGaN based LEDs for SSL.

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Bibliographic Details
Published in2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference pp. 1 - 2
Main Author Syrkin, A.L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
Subjects
Chemical analysis
Chemical technology
Crystalline materials
Crystallization
Gallium nitride
Indium
Light emitting diodes
Molecular beam epitaxial growth
Temperature distribution
Temperature measurement
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Summary:We will discuss results of InGaN material and device growth by HVPE. Application of new device concepts for LEDs arising from new HVPE capabilities will be discussed, including all-HVPE InGaN based LEDs for SSL.
ISSN:2160-9004
DOI:10.1364/cleo.2009.ptub4