Fabrication of a transparent p-n heterojunction thin film diode composed of p-CuAlO2/n-ZnO

• Published in: Physica status solidi. A, Applications and materials science Vol. 203; no. 6; pp. R51 - R53
• Main Authors: Kim, Dae-Sung, Park, Tae-Jin, Kim, Dae-Hyun, Choi, Se-Young
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.05.2006; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: 73.40.Ei; 78.20.Ci; 78.40.Fy; 81.05.Hd; 85.30.Kk; 85.60.-q; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Metal-insulator-semiconductor structures (including semiconductor-to-insulator); Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Thin films; Zinc oxides; Annealing; Space-charge-limited conduction; Oxidation; Absorption spectra; IV characteristic; Copper oxides; Transparent material; Electron beam evaporation; Heterostructures; Aluminium oxides
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200622137

An all‐oxide transparent p–n heterojunction on a glass substrate was fabricated. The structure of the diode was ITO electrode/p‐CuAlO2/n‐ZnO/In electrode on the glass substrate. The p‐CuAlO2 thin film was deposited by e‐beam evaporation, which was annealed by the wet‐oxidation method. The p–n heterojunction thin film diode showed rectifying current–voltage characteristics, dominated in forward bias by the flow of space‐charge‐limited current. The ratio of forward current to the reverse current exceeded 40 within the range of applied voltages of –4.0 to +4.0 V and the turn‐on voltage was 0.3 V. Optical transmission of the diode was about 40% in the visible range. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)