Phase-Change Memory in Bi2Te3 Nanowires

Bi2Te3 nanowires exhibit the phase‐change memory switching behavior. The as‐grown nanowire has a linear current–voltage curve and a crystalline structure. After switching to the high‐resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicat...

Full description

Saved in:
Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 23; no. 16; pp. 1871 - 1875
Main Authors Han, Nalae, Kim, Sung In, Yang, Jeong-Do, Lee, Kyumin, Sohn, Hyunchul, So, Hye-Mi, Ahn, Chi Won, Yoo, Kyung-Hwa
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 26.04.2011
WILEY‐VCH Verlag
Subjects
Aluminum Oxide - chemistry
Bi2Te3 nanowires
Bismuth - chemistry
Crystallization
data storage
Electrodes
Electroplating
Nanowires - chemistry
PRAM nanodevices
self-assembly
Silicon Compounds - chemistry
structure-property relationships
Tellurium - chemistry
Online AccessGet full text

Cover

More Information
Summary:Bi2Te3 nanowires exhibit the phase‐change memory switching behavior. The as‐grown nanowire has a linear current–voltage curve and a crystalline structure. After switching to the high‐resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicates that a crystalline–amorphous phase change in Bi2Te3 nanowires can be induced by a voltage pulse.
Bibliography:istex:64231A04F6899FAEDA9F1F3C79605FB9EDA19F1D
ArticleID:ADMA201004746
ark:/67375/WNG-T3JCZNPR-Z
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201004746