Self-catalyzed MBE grown GaAs/GaAsxSb1−x core-shell nanowires in ZB and WZ crystal structures

• Published in: Nanotechnology Vol. 24; no. 40
• Main Authors: Ghalamestani, Sepideh Gorji, Mazid Munshi, A, Dheeraj, Dasa L, Fimland, Bjørn-Ove, Weman, Helge, Dick, Kimberly A
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 11.10.2013; Institute of Physics
• Subjects: Catalytic methods; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Engineering and Technology; Exact sciences and technology; Materials science; Methods of nanofabrication; Nano Technology; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Nanoteknik; Physics; Quantum wires; Structure of solids and liquids; crystallography; Teknik; Gallium arsenides; Catalysts; Growth rate; Core shell structure; III-V compound; Zinc; Growth mechanism; Molecular beam epitaxy; Miscibility; Wurtzite structure; Nanowires; Nanostructured materials; Nanomaterial synthesis; III-V semiconductors; Crystal structure
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/24/40/405601

We have investigated the growth of self-catalyzed GaAs/GaAsxSb1−x core-shell nanowires directly on Si(111) substrates by molecular beam epitaxy. The compositions of the GaAsxSb1−x shells are tuned in a wide range where the Sb-content is varied from 10 to ∼70%, covering the miscibility gap. In addition, the GaAsxSb1−x shells are grown on both zinc blende (ZB) and wurtzite (WZ) crystal structures. Morphological and structural characterizations of the grown nanowires indicate successful transfer of the GaAs core crystal structure to the GaAsxSb1−x shells for both ZB and WZ nanowires, with slower shell growth rate on the WZ segments.