Electron scattering and hybrid phonons in low-dimensional laser structures made with GaAs/AlxGa1−xAs

• Published in: Semiconductor science and technology Vol. 24; no. 9; pp. 095014 - 095014 (4)
• Main Authors: Stavrou, V N, Veropoulos, G P
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.09.2009; Institute of Physics
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Quantum wells; Continuum; Charge carrier trapping; Gallium arsenides; Dispersion relations; Quantum wells; Phonon mode; Aluminium Gallium Arsenides Mixed; Phonon emission; Electron-phonon interactions; Heterostructures
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/0268-1242/24/9/095014

We theoretically and numerically present the hybrid phonon modes for the double heterostructure GaAs/AlxGa1-xAs and their interactions with electrons. More specifically, we have calculated the electron capture within a symmetric quantum well via the emission of hybrid phonons. Our investigation shows that the capture rates via the hybrid phonons are matched to the rates predicted by the dielectric continuum (DC) model and the concentration of aluminium which is an important parameter for controlling the electron capture process in light-emitting diodes (LED).