Room-temperature wafer bonding of LiNbO3 and SiO2 using a modified surface activated bonding method

In this paper, we report room-temperature bonding of LiNbO3 (LN) and SiO2/Si for the realization of a LN on insulator (LNOI)/Si hybrid wafer. We investigate the applicability of a modified surface activated bonding (SAB) method for the direct bonding of LN and a thermally grown SiO2 layer. The modif...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 57; no. 6S1
Main Authors Takigawa, Ryo, Higurashi, Eiji, Asano, Tanemasa
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.06.2018
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Summary:In this paper, we report room-temperature bonding of LiNbO3 (LN) and SiO2/Si for the realization of a LN on insulator (LNOI)/Si hybrid wafer. We investigate the applicability of a modified surface activated bonding (SAB) method for the direct bonding of LN and a thermally grown SiO2 layer. The modified SAB method using ion beam bombardment demonstrates the room-temperature wafer bonding of LN and SiO2. The bonded wafer was successfully cut into 0.5 × 0.5 mm2 dies without interfacial debonding owing to the applied stress during dicing. In addition, the surface energy of the bonded wafer was estimated to be approximately 1.8 J/m2 using the crack opening method. These results indicate that a strong bond strength can be achieved, which may be sufficient for device applications.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.06HJ12