Transfer printing of Al2O3 gate dielectric for fabrication of top-gate MoS2 FET

• Published in: Applied physics express Vol. 12; no. 2
• Main Authors: Kawanago, Takamasa, Oba, Tomoaki, Oda, Shunri
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.02.2019
• ISSN: 1882-0778; 1882-0786
• DOI: 10.7567/1882-0786/aaf995

This study describes the transfer printing of an Al2O3 gate dielectric for the fabrication of a top-gate MoS2 FET. The transfer printing of the Al2O3 gate dielectric involves the peeling-off process, etching of the sacrificial layer, and stacking on the MoS2. This method eliminates the direct deposition of Al2O3 gate dielectric on fragile MoS2 and provides an abrupt Al2O3/MoS2 interface. The fabricated FET has small hysteresis, low leakage current, a subthreshold slope of 120 mV dec−1, and a carrier mobility of 7.3 cm2 V−1 s−1. The transfer printing approach is applicable to various high-k gate dielectrics and layered materials for constructing functional devices.