Low-frequency noise spectroscopy of charge-density-wave phase transitions in vertical quasi-2D 1T-TaS2 devices

• Published in: Applied physics express Vol. 12; no. 3
• Main Authors: Salgado, Ruben, Mohammadzadeh, Amirmahdi, Kargar, Fariborz, Geremew, Adane, Huang, Chun-Yu, Bloodgood, Matthew A., Rumyantsev, Sergey, Salguero, Tina T., Balandin, Alexander A.
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.03.2019
• Subjects: charge-density waves; hidden phase; low-frequency noise; semiconductors; TaS2; two-dimensional materials; Vertical devices
• ISSN: 1882-0778; 1882-0786
• DOI: 10.7567/1882-0786/ab0397

We report results regarding the electron transport in vertical quasi-two-dimensional (2D) layered 1T-TaS2 charge-density-wave (CDW) devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of the quasi-2D material below room temperature. The noise spectral density revealed strong peaks-changing by more than an order-of-magnitude-at the temperatures closely matching the electrical resistance steps. Some of the noise peaks appeared below the temperature of the commensurate to nearly-commensurate CDW transition, possibly indicating the presence of the debated hidden phase transitions. These results confirm the potential of the noise spectroscopy for investigations of electron transport and phase transitions in novel materials.