Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

• Published in: Japanese Journal of Applied Physics Vol. 57; no. 1S
• Main Authors: Taoka, Noriyuki, Kubo, Toshiharu, Yamada, Toshikazu, Egawa, Takashi, Shimizu, Mitsuaki
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.01.2018
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.57.01AD04

The electrical interface properties of GaN metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance-voltage technique, Terman method, and conductance method. We found that O3 and the alternate supply of H2O and O3 (AS-HO) are effective for reducing the interface trap density (Dit) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation (σs) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a SiO2 layer formed by chemical vapor deposition despite the small Dit values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, σs has to be reduced to improve the performances and reliability of GaN devices with the Al2O3/GaN interfaces.