High-Speed Optical Modulation Based on Pockels Effect in Strained Silicon Waveguides

We report on the first demonstration of high-speed optical modulation exploiting Pockels effect in strained silicon waveguides. Bandwidths larger than 20 GHz and low insertion loss have been achieved at a wavelength of 1550 nm.

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Bibliographic Details
Published in2020 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Lafforgue, Christian, Berciano, Mathias, Deniel, Lucas, Marcaud, Guillaume, Le Roux, Xavier, Alonso-Ramos, Carlos, Benedikovic, Daniel, Vakarin, Vladyslav, Ruiz-Caridad, Alicia, Crozat, Paul, Marris-Morini, Delphine, Cassan, Eric, Vivien, Laurent
Format Conference Proceeding
LanguageEnglish
Published OSA 01.05.2020
Subjects
Electrooptic effects
Electrooptical waveguides
Optical modulation
Photonics
Silicon
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Summary:We report on the first demonstration of high-speed optical modulation exploiting Pockels effect in strained silicon waveguides. Bandwidths larger than 20 GHz and low insertion loss have been achieved at a wavelength of 1550 nm.
DOI:10.1364/CLEO_SI.2020.SM2J.1