Effect of Boron Addition on the Dielectric Properties of Giant Dielectric CaCu3Ti4O12

• Published in: Ferroelectrics Vol. 326; no. 1; pp. 103 - 108
• Main Authors: Mazumder, Ranabrata, Seal, Anshuman, Sen, Amarnath, Maiti, Himadri Sekhar
• Format: Journal Article Conference Proceeding
• Language: English
• Published: London Taylor & Francis Group 01.01.2005; Taylor and Francis
• Subjects: CaCu; Condensed matter: electronic structure, electrical, magnetic, and optical properties; dielectric; Dielectric properties of solids and liquids; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; ferroelectric; Niobates, titanates, tantalates, pzt ceramics, etc; Physics; Dissipation factor; ferroelectric; Monocrystals; CaCu3Ti4O12; Capacitors; Temperature effects; Dielectric properties; Calcium Titanates; Permittivity; Copper Titanates; dielectric; Dielectric relaxation
• ISSN: 0015-0193; 1563-5112
• DOI: 10.1080/00150190500318644

The recently discovered giant dielectric CaCu 3 Ti 4 O 12 (CCTO) has been reported to show dielectric constant value as high as 80,000 for single crystals and around 10,000 for ceramics. However the dielectric constant is also associated with high dissipation factor. In the present study, it has been observed that the loss factor of CCTO can be reduced by B 2 O 3 addition. The low frequency dispersion of CCTO ceramics, which indicates Maxwell-Wagner type relaxation, is reduced by boron addition. Also the temperature dependence of dielectric constant is minimized by boron addition. From the present work it can be surmised that B 2 O 3 addition can favourably modify the dielectric properties of CCTO ceramic for its practical applications as a capacitor material.