Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 55; no. 4S
Main Authors Hsu, Ching-Hsiang, Shih, Wang-Cheng, Lin, Yueh-Chin, Hsu, Heng-Tung, Hsu, Hisang-Hua, Huang, Yu-Xiang, Lin, Tai-Wei, Wu, Chia-Hsun, Wu, Wen-Hao, Maa, Jer-Shen, Iwai, Hiroshi, Kakushima, Kuniyuki, Chang, Edward Yi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.04.2016
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Summary:Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.04EG04