Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition

Al2O3/n-GaN MOS-capacitors grown by metalorganic chemical vapor deposition with in-situ- and ex-situ-formed Al2O3/GaN interfaces were characterized. Capacitors grown entirely in situ exhibited ∼4 × 1012 cm−2 fewer positive fixed charges and up to ∼1 × 1013 cm−2 eV−1 lower interface-state density nea...

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Published inApplied physics express Vol. 11; no. 4
Main Authors Chan, Silvia H., Bisi, Davide, Tahhan, Maher, Gupta, Chirag, DenBaars, Steven P., Keller, Stacia, Zanoni, Enrico, Mishra, Umesh K.
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.04.2018
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Summary:Al2O3/n-GaN MOS-capacitors grown by metalorganic chemical vapor deposition with in-situ- and ex-situ-formed Al2O3/GaN interfaces were characterized. Capacitors grown entirely in situ exhibited ∼4 × 1012 cm−2 fewer positive fixed charges and up to ∼1 × 1013 cm−2 eV−1 lower interface-state density near the band-edge than did capacitors with ex situ oxides. When in situ Al2O3/GaN interfaces were reformed via the insertion of a 10-nm-thick GaN layer, devices exhibited behavior between the in situ and ex situ limits. These results illustrate the extent to which an in-situ-formed dielectric/GaN gate stack improves the interface quality and breakdown performance.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.11.041002