Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications

• Published in: Applied physics express Vol. 8; no. 10
• Main Authors: Hsieh, Ting-En, Lin, Yueh-Chin, Liao, Jen-Ting, Lan, Wei-Cheng, Chin, Ping-Chieh, Chang, Edward Yi
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.10.2015
• ISSN: 1882-0778; 1882-0786
• DOI: 10.7567/APEX.8.104102

We demonstrate an Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistor (MIS-HEMT) device with stable electrical properties under high-voltage stress, by using an Al2O3/AlN stack layer as the gate dielectric layer. Excellent quality AlN/Al2O3 GaN interface was obtained by using plasma-enhanced ALD (PE-ALD), resulting in a very low interface trap density (Dit) of ∼1.8 × 1011 eV−1 cm−2, obtained by using the conductance method. The device exhibits a small threshold voltage hysteresis of ∼200 mV and a lower gate-source leakage current. No obvious changes in the drain-source current and ON-resistance were observed for the device that was subject to the drain-source voltage stress of 100 V for 15 h.