High performance MoS2-based field-effect transistor enabled by hydrazine doping

• Published in: Nanotechnology Vol. 27; no. 22; p. 225201
• Main Authors: Lim, Dongsuk, Kannan, E S, Lee, Inyeal, Rathi, Servin, Li, Lijun, Lee, Yoontae, Khan, Muhammad Atif, Kang, Moonshik, Park, Jinwoo, Kim, Gil-Ho
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 03.06.2016
• Subjects: doping; field-effect transistor; MoS; transition metal dichalcogenides
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/27/22/225201

We investigated the n-type doping effect of hydrazine on the electrical characteristics of a molybdenum disulphide (MoS2)-based field-effect transistor (FET). The threshold voltage of the MoS2 FET shifted towards more negative values (from −20 to −70 V) on treating with 100% hydrazine solution with the channel current increasing from 0.5 to 25 A at zero gate bias. The inverse subthreshold slope decreased sharply on doping, while the ON/OFF ratio increased by a factor of 100. Gate-channel coupling improved with doping, which facilitates the reduction of channel length between the source and drain electrodes without compromising on the transistor performance, making the MoS2-based FET easily scalable.