Preparation of Si-Added SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering at High Temperature

Si-added SrBi 2 Ta 2 O 9 (SBT) ferroelectric thin films were formed by RF magnetron sputtering on a Pt/Ti/SiO 2 /Si structure. The substrate was heated from 400°C to 650°C to crystallize SBT films. Sputtering power and Ar/O 2 pressure were 75 W and 3.0 Pa, respectively. It was found that the Si-adde...

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Bibliographic Details
Published inIntegrated ferroelectrics Vol. 60; no. 1; pp. 95 - 100
Main Authors KIKUCHI, S., ISHIWARA, H.
Format Journal Article
LanguageEnglish
Published Taylor & Francis Group 01.01.2004
Subjects
ferroelectric thin film
RF magnetron sputtering
SBT
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Summary:Si-added SrBi 2 Ta 2 O 9 (SBT) ferroelectric thin films were formed by RF magnetron sputtering on a Pt/Ti/SiO 2 /Si structure. The substrate was heated from 400°C to 650°C to crystallize SBT films. Sputtering power and Ar/O 2 pressure were 75 W and 3.0 Pa, respectively. It was found that the Si-added SBT films were crystallized at a deposition temperature between 500°C and 600°C, which was much lower than the conventional annealing temperature (800°C) of the film deposited at room temperature. * Originally presented at 10th European Meeting on Ferroelectricity, Cambridge, United Kingdom, August 3-8, 2003.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580490441700