CHARACTERISTICS OF BISMUTH-BASED THIN FILMS DEPOSITED DIRECTLY ON POLYMER SUBSTRATES FOR EMBEDDED CAPACITOR APPLICATION
B 2 Mg 2/3 Nb 4/3 O 7 (BMN) thin films were deposited at low temperature (< 200°C) on Copper Clad Laminates (CCL) with various Ar/O 2 flow ratios and film thicknesses by sputtering system. 200 nm-thick BMN thin films were deposited at Ar/O 2 = 10: 10 had rms roughness of 54.3 ÅA, capacitance dens...
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| Published in | Integrated ferroelectrics Vol. 95; no. 1; pp. 187 - 195 |
|---|---|
| Main Authors | , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Taylor & Francis Group
01.01.2007
|
| Subjects | |
| Online Access | Get full text |
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| Abstract | B
2
Mg
2/3
Nb
4/3
O
7
(BMN) thin films were deposited at low temperature (< 200°C) on Copper Clad Laminates (CCL) with various Ar/O
2
flow ratios and film thicknesses by sputtering system. 200 nm-thick BMN thin films were deposited at Ar/O
2
= 10: 10 had rms roughness of 54.3 ÅA, capacitance density of 155 nF/cm
2
at 100 kHz, dissipation factor of 0.017 and leakage current density of ∼10
− 5
at 3 V. Surface roughness of the BMN thin films increased a little with increasing the film thickness. However leakage current density decreased and the dielectric constant of that was maintained at 40. |
|---|---|
| AbstractList | B
2
Mg
2/3
Nb
4/3
O
7
(BMN) thin films were deposited at low temperature (< 200°C) on Copper Clad Laminates (CCL) with various Ar/O
2
flow ratios and film thicknesses by sputtering system. 200 nm-thick BMN thin films were deposited at Ar/O
2
= 10: 10 had rms roughness of 54.3 ÅA, capacitance density of 155 nF/cm
2
at 100 kHz, dissipation factor of 0.017 and leakage current density of ∼10
− 5
at 3 V. Surface roughness of the BMN thin films increased a little with increasing the film thickness. However leakage current density decreased and the dielectric constant of that was maintained at 40. B2Mg2/3Nb4/3O7 (BMN) thin films were deposited at low temperature ( < 200 deg C) on Copper Clad Laminates (CCL) with various Ar/O2 flow ratios and film thicknesses by sputtering system. 200 nm-thick BMN thin films were deposited at Ar/O2 = 10: 10 had rms roughness of 54.3 AA, capacitance density of 155 nF/cm2 at 100 kHz, dissipation factor of 0.017 and leakage current density of ~10- 5 at 3 V. Surface roughness of the BMN thin films increased a little with increasing the film thickness. However leakage current density decreased and the dielectric constant of that was maintained at 40. |
| Author | AHN, KYUNG-CHAN LEE, JEONG-WON YOON, SOON-GIL JUNG, HYUNG-MI JIN, HYUN-JOO MOON, JIN-SUCK AHN, JUN-KU LEE, SEUNG-EUN CHUNG, YEOUL-KYO OH, YONG-SOO KIM, HAE-WON SON, SEUNG-HYUN |
| Author_xml | – sequence: 1 givenname: JUN-KU surname: AHN fullname: AHN, JUN-KU organization: School of Nano Science and Technology , Chungnam National University – sequence: 2 givenname: HAE-WON surname: KIM fullname: KIM, HAE-WON organization: School of Nano Science and Technology , Chungnam National University – sequence: 3 givenname: KYUNG-CHAN surname: AHN fullname: AHN, KYUNG-CHAN organization: School of Nano Science and Technology , Chungnam National University – sequence: 4 givenname: SOON-GIL surname: YOON fullname: YOON, SOON-GIL organization: School of Nano Science and Technology , Chungnam National University – sequence: 5 givenname: SEUNG-HYUN surname: SON fullname: SON, SEUNG-HYUN organization: Samsung Electro-Mechanics Co. LTD – sequence: 6 givenname: HYUNG-MI surname: JUNG fullname: JUNG, HYUNG-MI organization: Samsung Electro-Mechanics Co. LTD – sequence: 7 givenname: JIN-SUCK surname: MOON fullname: MOON, JIN-SUCK organization: Samsung Electro-Mechanics Co. LTD – sequence: 8 givenname: HYUN-JOO surname: JIN fullname: JIN, HYUN-JOO organization: Samsung Electro-Mechanics Co. LTD – sequence: 9 givenname: SEUNG-EUN surname: LEE fullname: LEE, SEUNG-EUN organization: Samsung Electro-Mechanics Co. LTD – sequence: 10 givenname: JEONG-WON surname: LEE fullname: LEE, JEONG-WON organization: Samsung Electro-Mechanics Co. LTD – sequence: 11 givenname: YEOUL-KYO surname: CHUNG fullname: CHUNG, YEOUL-KYO organization: Samsung Electro-Mechanics Co. LTD – sequence: 12 givenname: YONG-SOO surname: OH fullname: OH, YONG-SOO organization: Samsung Electro-Mechanics Co. LTD |
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| Snippet | B
2
Mg
2/3
Nb
4/3
O
7
(BMN) thin films were deposited at low temperature (< 200°C) on Copper Clad Laminates (CCL) with various Ar/O
2
flow ratios and film... B2Mg2/3Nb4/3O7 (BMN) thin films were deposited at low temperature ( < 200 deg C) on Copper Clad Laminates (CCL) with various Ar/O2 flow ratios and film... |
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| SubjectTerms | BMN Embedded capacitor Polymer substrates |
| Title | CHARACTERISTICS OF BISMUTH-BASED THIN FILMS DEPOSITED DIRECTLY ON POLYMER SUBSTRATES FOR EMBEDDED CAPACITOR APPLICATION |
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