CHARACTERISTICS OF BISMUTH-BASED THIN FILMS DEPOSITED DIRECTLY ON POLYMER SUBSTRATES FOR EMBEDDED CAPACITOR APPLICATION

B 2 Mg 2/3 Nb 4/3 O 7 (BMN) thin films were deposited at low temperature (< 200°C) on Copper Clad Laminates (CCL) with various Ar/O 2 flow ratios and film thicknesses by sputtering system. 200 nm-thick BMN thin films were deposited at Ar/O 2 = 10: 10 had rms roughness of 54.3 ÅA, capacitance dens...

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Published inIntegrated ferroelectrics Vol. 95; no. 1; pp. 187 - 195
Main Authors AHN, JUN-KU, KIM, HAE-WON, AHN, KYUNG-CHAN, YOON, SOON-GIL, SON, SEUNG-HYUN, JUNG, HYUNG-MI, MOON, JIN-SUCK, JIN, HYUN-JOO, LEE, SEUNG-EUN, LEE, JEONG-WON, CHUNG, YEOUL-KYO, OH, YONG-SOO
Format Journal Article
LanguageEnglish
Published Taylor & Francis Group 01.01.2007
Subjects
BMN
Embedded capacitor
Polymer substrates
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Summary:B 2 Mg 2/3 Nb 4/3 O 7 (BMN) thin films were deposited at low temperature (< 200°C) on Copper Clad Laminates (CCL) with various Ar/O 2 flow ratios and film thicknesses by sputtering system. 200 nm-thick BMN thin films were deposited at Ar/O 2 = 10: 10 had rms roughness of 54.3 ÅA, capacitance density of 155 nF/cm 2 at 100 kHz, dissipation factor of 0.017 and leakage current density of ∼10 − 5 at 3 V. Surface roughness of the BMN thin films increased a little with increasing the film thickness. However leakage current density decreased and the dielectric constant of that was maintained at 40.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580701759262